sliconcaras, %inle ti teir typica uage rquirents. ngr rane llviatesthe thretof dd batery at te radie, or of extnded wait tims at crging pins, aitig ora chrger to comefre and ten to ar the battey. ilconard has ld the infusi of widedgap techoloy nto the ev scene replacinglegcy siicn osfets or ibs in the traction nverter, epecall. sic msfets are known fortheir speror conductivity and switchin performance compared to silicon devices. additional advantages include greater ability to withstand elevated temperatures and high breakdown voltage in relation to device size, which permit enhanced ruggedness and power density. in other systems mounted on the vehicle, such as the on-board charger and